Indian Institute of Technology-IIT-Indore has made a big achievement. The country’s first high electron mobility transistor has been developed at IIT Indore. It will be available at five times lower prices than imported transistors, which will be available in the market by April. Till now these transistors were imported from China and other countries at expensive prices.
The special thing is that due to the low price of the native transistor, now the electric car-bike will also become very cheap. Actually the institute has made a big difference in the prices by making transistors from zinc oxide instead of gallon nitrite.
The country’s first High Electron Mobility Transistor (HEMT) prepared at IIT-Indore will soon be available in the market. This is the first commercial patent of IIT Indore. IIT Indore has taken the support of IIT Delhi for this. For this an agreement has been signed between the two institutions.
The special thing is that the high electron mobility transistors imported from China and other countries are made from gallon nitrite. Due to this their cost is very high. Whereas the transistor prepared at IIT Indore is made from zinc oxide. Its cost will be five times less than the transistors imported from outside.
Significantly, there has been a discussion in the world for a long time whether high electron mobility transistors can be made from zinc oxide? High electron mobility transistors are used in devices to send signals to other places in a short time.
Most of it will be used in electric vehicles, satellites, supercomputers, space technology, cardless phones, wireless sets etc. With the start of production of transistors, the converters used in electric vehicles will not have to be imported from outside. These will be made in India itself, due to which the cost of electric vehicles will also be reduced.